3.3 kV Full SiC MOSFETs Towards High-Performance Traction
With a rated voltage of 3.3 kV and a current of 750 A, the new Full SiC dual module is especially intended for high performance traction converters and flexible converter designs.
Silicon Carbide High Voltage, High Frequency Conversion
Both projects use 10 kV SiC devices and high frequency transformers 10 kV SiC modules: Cree/ Powerex HF transformers: Los Alamos, IAP, Dynapower
Extreme high efficiency enabled by silicon carbide (SiC) power devices
With the swift commercialization of SiC power devices, ranging from 600V to 3.3 kV and with future potential up to tens of kV, SiC MOSFET is rapidly supplanting silicon IGBT technology,
10 kV, 120 A SiC Half H-Bridge Power MOSFET Modules
The SSPS is a 4 stage, AC – AC, soft-switched converter (Fig. 11) that steps the voltage at 20 kHz using a compact nano-crystalline transformer to facilitate a 75% reduction in weight and a 50% reduction in
SiC and Silicon MOSFET solution for high frequency DC-AC
Hence SiC MOSFET is the first device facing the challenge to switch in very high voltage, very high frequency and high power DC-AC converters, irrespectively of the final application ranging from
Silicon carbide CoolSiC™ MOSFETs | Infineon Technologies
CoolSiC™ MOSFETs from Infineon provide high efficiency and optimal reliability. Our range of products is available in discrete housing as well as modules in 400 V, 650 V, 750 V, 1200 V, 1700 V, 2000 V,
(PDF) Review on Silicon Carbide based High-Fundamental Frequency
This article provides a comprehensive review of Silicon Carbide (SiC) based inverters designed for High-Speed (HS) drive applications, which require higher output frequencies to enhance...
Review on Silicon Carbide based High-Fundamental Frequency
Recent research and development efforts in SiC inverters for electric drive applications highlight a strong focus on achieving high power density, high efficiency, and high-frequency operation.
TND6237
Switching high−voltage power rails in excess of 1,000 V, operating at hundreds of kHz is non−trivial and beyond the capabilities of even the best superjunction silicon MOSFETs. IGBTs are commonly used